Signal-powered integrated circuit with ESD protection

ABSTRACT

The invention provides a signal-powered integrated circuit (IC). The IC comprises an integrated circuit die including a ground node, a supply node, and a first terminal for receiving a digital data signal having data content and a predetermined energy. A receive buffer formed on the integrated circuit die is connected to the first terminal and capable of receiving the data content associated with the digital data signal. A rectifier is also formed on the integrated circuit die. The rectifier includes a first diode connected between the first terminal and the ground node and a second diode connected between the first terminal and the supply node. The rectifier is configured to rectify the digital data signal and pass at least a portion of the digital data signal&#39;s predetermined energy to the supply node. Each of the first and second diodes is capable of withstanding an ESD impulse.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional of co-pending application Ser. No. 11/159,614,filed on Jun. 23, 2005, the teachings of which are incorporated hereinby reference.

FIELD OF THE INVENTION

The present invention relates generally to digital communication betweentwo devices.

BACKGROUND OF THE INVENTION

Regulatory agencies throughout the world have established standards andregulations for connecting subscriber equipment to telephone networks.These regulations are intended to prevent damage to the telephonenetwork and mitigate interference with other equipment also connected tothe network. The regulations, however, often present difficult designchallenges.

For example, subscriber equipment or data communications equipment, suchas a data modem, is generally required to provide for some form ofelectrical isolation to prevent voltage surges or transients originatingfrom the subscriber equipment from having a deleterious effect on thetelephone network. Electrical isolation also addresses potentialproblems associated with differences in operating voltages between atelephone line and the subscriber equipment. More particularly,telephone line voltages may vary widely across a given network, andoften exceed the operating voltage of subscriber equipment. In theUnited States, 1,500-volt isolation is currently required. In othercountries, the prescribed isolation may reach 3,000-4,000 volts.

A number of techniques have been utilized to provide the requisite levelof electrical isolation. For example, large analog isolationtransformers are often employed to magnetically couple analog signalsbetween a two-wire telephone line and the analog front end of a modem orother circuit while maintaining an appropriate level of electricalisolation. The isolation transformer functions to block potentiallyharmful DC components, thereby protecting both sides of the dataconnection.

The isolation transformer is typically part of what is referred to inthe modem arts as a data access arrangement (DAA). The term DAAgenerally refers to circuitry that provides an interface between apublic telephone network originating in a central office and a digitaldata bus of a host system or data terminal equipment. The DAAelectrically isolates a modem or similar device from a phone line tocontrol emissions of electromagnetic interference/radio frequencyinterference (EMI/RFI). In addition to electrical isolation, the DAAoften develops a number of signals (e.g., a ring signal) for provisionto subscriber equipment. The DAA may receive signals from the phone linethrough a telephone jack, such as a RJ11C connection as used forstandard telephones.

Typically, a number of circuits must derive information from thetelephone line, and isolation is often required for each signalcommunicated to and from the host system. Such circuits may include:transmit and receive circuitry; ring signal detection circuitry;circuitry for switching between voice and data transmissions; circuitsfor dialing telephone numbers; line current detection circuitry;circuitry for indicating that the equipment is coupled to a functionaltelephone line; and line disconnection detection circuitry. ConventionalDAA designs utilize separate line side circuits and separate signalpaths across a high voltage isolation barrier for each function of theDAA. This conventional design requires an undesirably large number ofisolation barriers.

A more modern solution to reduce the number of isolation barriers in aDAA is to separate the DAA circuitry into line-side circuitry and systemside circuitry. The line-side circuitry includes the analog componentsrequired to connect to the telephone line, while the system sidecircuitry typically includes digital signal processing circuitry andinterface circuitry for communicating with the host system. Incominganalog data signal from the telephone line is digitized via ananalog-to-digital converter in the line-side circuitry and transmittedacross the “digital” isolation barrier to the system side circuitry viaa digital bi-directional serial communication link. The digital datasignal may then be processed by the digital signal processing circuitryin the system side circuitry. Conversely, digital data signals from thehost system may be transmitted via the bi-directional serialcommunication link through the digital isolation barrier to the lineside circuitry, where the digital data signals are converted to analogsignals and placed on the telephone line.

A problem that arises in this more modern DAA, however, is that theline-side circuitry must be provided with a separate DC power supplythat is isolated from the host system power. Two main approaches toprovide an isolated power supply have been proposed. In the firstapproach, power is transferred from the host system to the line sidecircuitry via a separate power transformer in the form of a stream ofdigital pulses. The pulses form an AC signal that may be converted to aDC supply voltage via a rectifier in the line-side circuitry. Thisapproach disadvantageously requires at least two transformers—one toserve as the isolation barrier for the digital data signals, and theother to provide power to the line-side circuitry.

A second approach that has been proposed is to derive power for theline-side circuitry from the telephone line itself. This approach,however, is difficult to implement in practice, because thespecifications of the telephone communications systems in certaincountries, including Germany and Austria, severely limit the amount ofpower that a DAA may use from a telephone line. This approach also tendsto reduce the distance that the subscriber equipment may be located fromthe telephone central office, because the voltage drop on the telephoneline increases as the distance between the subscriber equipment and thetelephone company central office increases.

SUMMARY OF THE INVENTION

One embodiment of the invention provides a single digital communicationlink between system-side and line-side circuitry in a DAA, capable bothof carrying data signals and of transferring sufficient power to operatethe line-side circuitry without draining power from the telephone line.The present inventors have recognized that a tremendous amount of powermay be transmitted from a system-side interface circuit to a line-sideinterface circuit using an isolation transformer, and that the cost ofusing a transformer as the isolation barrier may be greatly reduced bytransmitting both data and power over a single isolation transformer.Accordingly, an embodiment of the invention comprises a system-sideinterface circuit, a line-side interface circuit, and an isolationbarrier including a transformer over which both data and power signalsmay be transmitted. Each interface circuit is capable of connection toan upstream communication circuit (either line-side or system-side),from which it may receive forward-going data signals to be transmittedacross the isolation barrier to the other interface circuit, and towhich it may pass data signals received across the isolation barrierfrom the other interface circuit.

Each interface circuit preferably includes a mode switch and a tri-statebuffer, which enable the interface circuit to operate in a transmit modeor a receive mode. In transmit mode, the interface circuit passessignals from the respective upstream communication circuit to theisolation barrier. In receive mode, the interface circuit receives, andlatches to, signals received across the isolation barrier. In thesystem-side interface circuit, this latching operation allows thesystem-side interface circuit to transfer power to the line-sideinterface circuit, even while the line-side interface circuit istransmitting signals to the system-side interface circuit. Further, inthe line-side interface circuit, the latching operation allows thetri-state buffer to serve as a rectifier.

Another embodiment of the invention further provides a communicationprotocol for use in a communication interface including an isolationbarrier. A single frame in the communication protocol includes one ormore forward data bits; one or more forward control bits; one or morereverse data bits, and one or more reverse control bits, encoded viaManchester encoding such that the flux balance of the isolation barrieris maintained. The communication frame may further include one or more“padding” bits that may be added or removed based on the number offorward and reverse data bits that are in the frame, so that thecommunication interface may accommodate more than one data throughputrate while retaining a fixed clock rate. The frame may still furtherinclude a “sync” pattern comprising three consecutive cycles having thesame value.

Still another embodiment of the invention provides a method ofcommunicating signals across an isolation barrier in accordance with theabove communication protocol.

Yet another embodiment of the invention provides a signal-poweredintegrated circuit (IC). The IC comprises an integrated circuit dieincluding a ground node, a supply node, and a first terminal forreceiving a digital data signal having data content and a predeterminedenergy. A receive buffer formed on the integrated circuit die isconnected to the first terminal and capable of receiving the datacontent associated with the digital data signal. A rectifier is alsoformed on the integrated circuit die. The rectifier includes a firstdiode connected between the first terminal and the ground node and asecond diode connected between the first terminal and the supply node.The rectifier is configured to rectify the digital data signal and passat least a portion of the digital data signal's predetermined energy tothe supply node. Each of the first and second diodes is capable ofwithstanding an ESD impulse.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the present invention will now be described indetail in conjunction with the annexed drawings, in which:

FIG. 1 is a block diagram depicting a digital communication linkaccording to one embodiment of the invention;

FIG. 2 is a timing diagram illustrating the operation of the digitalcommunication link of FIG. 1;

FIG. 3 is a framing diagram illustrating the composition of a framesuitable for use in the digital communication link of FIG. 1;

FIG. 4 is a further framing diagram illustrating the composition of aframe having an odd-numbered quantity of cycles, suitable for use in thedigital communication link of FIG. 1;

FIG. 5 is a circuit diagram illustrating a digital communication linkaccording to another embodiment of the invention;

FIG. 6 is a conceptual diagram illustrating the transfer of power in thedigital communication link of FIG. 5;

FIG. 7 is a circuit diagram illustrating a single-ended embodiment of adigital communication link according to still another embodiment of theinvention; and

FIG. 8 is a chart illustrating the relationship between power transferand the forward-to-reverse transmission ratio in the digitalcommunication link of FIG. 5.

DETAILED DESCRIPTION

Embodiments of the present invention provide an isolated digitalcommunication link between line-side circuitry and system-side circuitryin a DAA. In accordance with one embodiment of the invention, a singletransformer is employed as the isolation barrier. Using thesingle-transformer isolation barrier (“STIB”), a sufficiently largeamount of power may be transferred from a system-side interface circuit(“SSIC”) to operate the line-side interface circuit (“LSIC”) withoutrelying on the telephone line as a primary source of power. The STIB maycarry bi-directional data, clock and power signals.

FIG. 1 depicts a digital communication link according to an embodimentof the invention. Digital communication link 100 comprises SSIC 180 andLSIC 182, separated by STIB 136. Preferably, each of SSIC 180 and LSIC182 are integrated respectively on a single integrated circuit. The STIB136 is preferably a surface-mounted component with a high power capacityand low impedance. Each of SSIC 180 and LSIC 182 include at least onetri-state buffer 108, 156 connected to the STIB 136 (at nodes 126 and138) for transmitting signals across the STIB 136. Each of SSIC 180 andLSIC 182 further includes a receive buffer 133, 176 connected to theSTIB 136, for receiving signals transmitted by the other interfacecircuit. Each of buffers 108, 156, 133 and 176 are preferablyamplifying-type buffers, which respectively amplify either the signal tobe transmitted across the STIB 136 or the received signal received viathe STIB 136.

SSIC 180 and LSIC 182 may also include additional tri-state buffers 114and 172 and associated inverters 106, 168, which in conjunction withtri-state buffers 108 and 156 may form a push-pull amplifier. Thepush-pull (or “double-ended”) configuration provides a high powercapacity and a large voltage swing across the primary and/or secondarywindings of the STIB 136.

In digital communication link 100, both power and data may becommunicated between the SSIC 180 and the LSIC 182 across the STIB 136,via a frame-based TDM (time-division-multiplexed) communicationprotocol. In each frame, representing a predetermined time period, SSIC180 and SLIC 182 alternate between transmitting and receiving, asdetermined by control signals SelF and SelR provided by selectioncontrol logic (not shown). During the first period of a frame, forexample, a predetermined selection control signal SelF at pin 104enables tri-state buffers 108, 114 on the system side, while acomplementary control signal SelR input at pin 166 disables tri-statebuffers 156, 172 on the line side. As a result, forward-going datasignal TxF (a forward-going pulse stream) received at pin 102 isamplified and transmitted via system-side tri-state buffers 108, 114onto the system side winding of transformer T1 and subsequently passedto line-side receive buffer 176 via the line side winding of transformerT1. The forward-going data signal is then output at pin 178 as theforward data signal RxF. Similarly, for reverse transmission from theline side to the system side, control signals SelF and SelR are providedto enable tri-state buffers 156, 172 and disable tri-state buffers 108,114. Data signal TxR (a reverse-going pulse stream) is thus amplifiedand transmitted across the transformer, received at receive buffer 133,and output as reverse data signal RxR.

LSIC 182 preferably includes a power circuit for receiving power fromSSIC 180 across STIB 136. More specifically, rectifier 144 and a storagedevice such as supply capacitor 154 are connected across the secondarywinding of the STIB 136 (at nodes 138, 140). Rectifier 144 may be adiode bridge rectifier comprising diodes 146, 148, 150, and 152 asshown. Diodes 146, 148, 150 and 152 are preferably Schottky diodes witha low turn-on voltage. Via rectifier 144 and supply capacitor 154, theforward data pulse stream (which effectively represents an AC signal)comprising signal TxF appearing at the line-side winding of transformerT1 may be converted to a DC voltage VddL at node 162. This DC voltageVddL may then be used to provide the supply voltage for the line-sidecircuitry.

Rectifier 144 may be implemented from four diodes integrated onto thesame integrated circuit die as LSIC 182 and connected to the pair ofterminals that connect LSIC 182 to the line side of the transformer. Inthis implementation, each pad (at nodes 138 and 140) is provided with adiode connected “up” to the positive voltage supply VddL and a diodeconnected “down” to ground, thus forming a rectifying bridge. Thus,diode pairs 146, 148 and 150, 152 respectively form half-wave rectifiersfor the input signals at nodes 142 and 174, and together form afull-wave rectifier for the differential signal between node 142 and174. In this embodiment, the input signal preferably has an averageenergy that is sufficiently large to cause the diode rectifier 144 tooperate (i.e., has an amplitude that is greater than the cut-in voltagesof the diodes).

Preferably, diodes 146, 148, 150, and 152 are capable of withstanding atransient ESD impulse of about 1000 volts to about 2000 volts and havesufficient current-carrying capacity to protect the integrated circuitdie from electrostatic discharges. When an ESD event occurs, thetransient voltage is simply shunted to the appropriate supply rail(ground or supply voltage VddL). In this embodiment, diodes 146, 148,150, and 152 serve not only as rectifying diodes but also as the primaryESD protection diodes for the input pins for LSIC 182, and indeed mayserve as the sole ESD protection devices for those pins.

A synchronous rectifier may also be used, either as an alternative tothe diode bridge rectifier described above or in conjunction with it. Ifboth the diode bridge and the synchronous rectifier are present, thenthe diode bridge may be used to generate the initial start-up voltagethat is needed for operation while the LSIC 182 is initially powering up(e.g., while the control logic for the synchronous rectifier lackssufficient voltage to operate). The synchronous rectifier may then beused for rectification after the initial start-up voltage reaches alevel high enough for the synchronous rectifier to operate. In a furtherembodiment, diodes 146, 148, 150 and 152 may be parasitic diodes formedby the various semiconductor junctions in the transistors in thesynchronous rectifier, as further described below.

The operation of digital communication link 100, and the various signalstherein, may be more fully understood with reference to the timingdiagram shown in FIG. 2. A suitable TDM protocol may be based on arepeating frame 200, shown as bit periods 202 through 207. During bitperiod 201 (the bit period before the start of frame 200), controlsignal SelF is enabled (at 210) while control signal SelR is disabled(at 222), and continue in those respective states through bit period 202and 203 and the initial portion of bit period 204. As a result, duringbit periods 202, 203 and 204, signal TxF (the forward pulse stream) istransmitted via tri-state buffers 108 and 114 across transformer T1 andreceived as signal RxF, as indicated by the single-line shading in theTxF and RxF lines.

The LSIC 182 transmits during the latter portion of frame 200, i.e., inbit periods 205-207. During bit period 204, control signals SelF andSelR are reversed in polarity, such that the line-side tri-state buffers156, 172 are enabled while the system side tri-state buffers 108, 114are disabled. Accordingly, during bit periods 205-207, signal TxR (thereverse pulse stream) is transmitted via line-side tri-state buffers156, 172 across transformer T1 and received as signal RxR, as indicatedby the cross-hatching in the TxR and RxR lines during bit periods205-207.

Receive buffers 133 and 176 may be active throughout frame 200. Thus,signal TxF at the system side can then be received by both buffer 133and buffer 176 and output at pins 132 and 178, respectively, during thefirst portion of frame 200. Correspondingly, during the second portionof frame 200, signal TxR at the line side is received by both buffers133 and 176. For this reason, the RxF and RxR signals in FIG. 2 arerepresented by only one signal line, designated RxF/RxR. Signals EnF andEnR in FIG. 2 are used to improve power transfer and will be furtherdescribed below.

In order to avoid saturating the transformer, the communication signalsacross the STIB 136 are preferably flux-balanced. By way of example, theflux-turns product limit of a transformer suitable for use in a modernmodem system might be about 2.35 microvolt-seconds, or 652.5 nanosecondsat 3.6 volts. Accordingly, the transmission protocol should provide a DCbalanced code, e.g., over two data frames. By way of example, Manchesterencoding or alternate mark inversion (“AMI”) may readily be employed inthe present invention.

FIG. 3 depicts a communication protocol suitable for use with thepresent invention, in which the flux of the STIB 136 is balanced byusing a Manchester-type encoding scheme (i.e., encoding a 0 bit as thetwo-bit sequence 01 and encoding a 1 bit as the two-bit sequence 10). Incontrast to the protocol of FIG. 2 above, the protocol of FIG. 3 employstime-division multiplexing but allocates different amounts of time tothe SSIC 180 and the LSIC 182, in order to allow the forwardtransmission of a framing sequence.

More specifically, in the protocol of FIG. 3, the SSIC 180 transmitsduring time slots 301-308 and the LSIC 182 transmits during time slots309-312. The basic frame 322 in FIG. 3 may include:

(1) a forward data bit during time slots 301 and 302 (shownManchester-encoded as DF, followed by NOT DF);

(2) a forward control bit during time slots 303 and 304 (shown as CF,NOT CF);

(3) a predetermined forward framing sequence 326 during time slots305-308 (shown as NOT CF, NOT CF, CF, CF);

(4) a reverse data bit during time slots 309 and 310 (shown as DR, NOTDR); and

(5) a reverse control bit during time slots 311 and 312 (shown as CR,NOT CR).

The protocol of FIG. 3 may also include dummy or padding bits 330, whichmay be added or removed to adjust the frame size. In this way, a widevariety of data rates may be accommodated without altering the clockrate of the SSIC 180 and the LSIC 182. By way of example, six paddingbits (e.g., 0, 1, 0, 1, 0, 1), of alternating values in order to achieveflux balance, are depicted in time slots 313-318. As shown in FIG. 4, anodd-number of padding bits may also be accommodated by balancing theflux of the padding bits over two consecutive frames, Frame k and Framek+1. For example, if frame k contains the padding bit sequence [01010],frame k+1 may contain the sequence [10101].

The forward framing sequence may be any unique sequence of bit valuesthat may be used to identify where a frame starts and/or ends. Forexample, in the protocol shown in FIG. 3, the inverse control bit (NOTCF) in time slot 304 is repeated twice thereafter, in time slots 305 and306. This thrice-repeated value provides a unique synchronization(“sync”) pattern that may readily be identified, insofar as Manchesterencoded signals (01, 10) never result in a three-time-slot sequence ofthe same values. A suitable detection circuit for this sync pattern maybe implemented, for example, via a three-bit shift register, where eachbit in the register is provided to a 3-input AND gate that outputs asignal when the thrice-repeated value is detected. Other frame detectiontechniques may also be used in lieu of the sync pattern described above.For example, a large buffer may be used to store incoming data, and thebuffered data may then be statistically analyzed by a microprocessor todetermine the framing, in accordance with techniques known in the art.

FIGS. 5 and 6 illustrate a further embodiment of the invention, in whichthe rectifier and tri-state buffer functions of the LSIC 182 shown inFIG. 1 are provided by a novel “rectifying buffer,” and in which theinterface circuits include feedback paths that enhance the transfer ofpower from the SSIC 180 to the LSIC 182. With reference to FIG. 5,rectifying buffer 504 comprises a tri-state buffer 156 connected to asupply capacitor and to the STIB 136 via interface terminal Vs+, a modeswitch MX1L connected to the tri-state buffer, and a feedback path 508between the STIB 136 and the mode switch MX1L. Rectifying buffer 504further has a “receive output terminal” for outputting signal RxF+ and atransmission input terminal for receiving signal TxR+. Tri-state buffer156, in turn, comprises a complementary transistor pair M1L (a P-channelMOSFET) and M2L (an N-channel MOSFET), NAND logic gate ND1L connected toone transistor in the pair (M1L), NOR logic gate NR2L connected to theother transistor in the pair (M2L), and inverter IN1L connected betweenthe ENABLE inputs of the NAND and NOR gates.

In accordance with this embodiment of the invention, the complementarytransistor pair 156, 172 in the tri-state buffer serves both as anoutput driver for transmitting signals to the SSIC 180, and as asynchronous rectifier for rectifying signals received from the SSIC 180.Rectifying buffer 504 effectively has two modes: a transmit mode and arectifying mode, depending on the state of mode switch MX1L. The modeswitch MX1L is controlled in turn by line-side interface control logic(not shown).

The LSIC 182 and SSIC 180 are preferably configured to communicate inaccordance with a TDM protocol such as that depicted in FIGS. 2-4. Inparticular, the SSIC 180 transmits during a predetermined time slot of aTDM frame (the “forward transmit period”), and the LSIC 182 transmitsduring a different time slot of the frame (the “reverse transmitperiod”). During the forward transmit period, while the SSIC 180transmits over the STIB 136, the line-side interface control logic (notshown) provides a suitable SelR signal (e.g., a zero-volt signal) toplace the rectifying buffer in a rectifying mode, in which a substantialportion of the energy in the forward data transmitted by the SSIC 180 isdiverted and stored in supply capacitor C_(L). During the reversetransmit period, when the LSIC 182 is scheduled to transmit reverse dataover the STIB 136, a suitable SelR signal (e.g., a 3.5-volt signal) isprovided, which causes the rectifying buffer to operate as aconventional tri-state buffer (i.e., to pass data signals from the SLICto the SSIC 180 via the STIB 136).

Because the signal transmitted over the STIB 136 is preferably adifferential signal (a.k.a. double-ended or ungrounded), a secondrectifying buffer 506 may also be provided in LSIC 182. The secondrectifying buffer 506 similarly includes a tri-state buffer 172, a modeswitch MX2L, and a feedback path 510. Tri-state buffer 172 includescomplementary transistors M3L and M4L, NAND logic gate ND3L, NOR logicgate NR4L, and inverter IN3L. Together, rectifying buffer 156 andrectifying buffer 172 form a differential rectifying buffer 512.

FIG. 6 illustrates how differential rectifying buffer 512 may operate torectify a differential signal transmitted by the SSIC 180 over the STIB136, in order to provide power to a supply capacitor C_(L) in the LSIC182. FIG. 6 depicts several states of a simplified circuit diagram of adifferential push-pull transmitter (represented by switches M1S, M2S,M3S and M4S with associated internal resistances) connected via a STIB136 to a differential rectifying buffer (represented by switches M1L,M2L, M3L, and M4L with associated internal resistances) and a supplycapacitor C_(L). Three consecutive states of the circuit are shown indiagrams 610, 620 and 630, in which the transmitter transitions fromtransmitting a value “1” (diagram 610) to a value “0” (diagram 630).Since a differential transmitter is conventionally implemented via twosets of complementary transistors in a push-pull configuration, switchesM1S and M2S represent the two complementary transistors in the upper legof the differential transmitter, while switches M3S and M4S representthe two complementary transistors in the lower leg.

In accordance with one embodiment of the invention, the switchescomprising differential rectifying buffer 512 are operated as asynchronous rectifier. Diagram 610 depicts an exemplary state of thecircuit, in which a “one” transmission bit is transmitted from SSIC 180to LSIC 182 by closing switches M1S and M4S and opening switches M2S andM3S. A forward current loop is created from a supply source Vsplythrough switch M1S, through the primary winding of the STIB 136, andfinally through switch M4S to ground (ignoring the internalresistances). On the line side, switches M1L and M4L are closed, whileswitches M2L and M3L are opened. As a result, the current that isimposed on the secondary winding of the STIB 136 flows through switchM1L, through load impedance R_(L), and finally through switch M4L, whileat the same time charging supply capacitor C_(L).

In diagram 620, all of the switches in the differential rectifyingbuffer are opened, in order to break the flow of current through thesecondary winding of the STIB 136. During this time period, the LSIC 182loads are supplied only by supply capacitor C_(L). Because there is noload current on the line side through the transformer secondary, thepolarity of the transformer primary can easily be changed by closingswitches M2S and M3S and opening switches M1S and M4S. Accordingly, thecurrent path in the transmitter in diagram 620 is from supply sourceVsply through switch M3S, through the transformer primary (with oppositepolarity), and then through switch M2S to ground.

Finally, in diagram 630, switches M1L and M4L on the line side areopened, while switches M2L and M3L are closed. Because the polarity onthe transformer has been flipped, the transformer secondary is nowreconnected to the load with the correct polarity. Current still flowsinto the positive terminal of capacitor C_(L), and thus power continuesto be transferred from SSIC 180 to LSIC 182 during the bit period inwhich the “zero” value is being transmitted by the SSIC 180. Thus, thesignal from SSIC 180 has been rectified by the differential rectifyingbuffer by operating the switches M1L, M2L, M3L and M4L in substantialsynchronism with that signal.

The “break before make” step illustrated in diagram 620 is optional. Ifit is omitted, however, the system side transmitter will likely have tobe significantly more powerful (and therefore larger) than the line sideswitches, in order to override the flow of current through thetransformer secondary. In contrast, in the “break before make”implementation described above, the line side switches may beapproximately equal in size to the system side switches. Thebreak-before-make time interval is preferably sufficiently long tointerrupt or substantially reduce the flow of current in the secondary.In certain applications, for example in high-speed modem applications, atime interval of a few nanoseconds is sufficient for this purpose.

Referring again to FIG. 5, the various signals in the embodimentdepicted in FIG. 5 are shown in the table below. All of the signals aredifferential, or complementary, with the exception of the select signalsand the enable signals.

Signal Function EnF Enable Forward Transmission SelF Select ForwardTransmission TxF+ Transmit Forward Data (Pos) - “Positive” differentialinput for data to be transmitted from the SSIC 180 to the LSIC 182across the isolation barrier TxF− Transmit Forward Data (Neg) -“Negative” differential input for data to be transmitted from the SSIC180 to the LSIC 182 across the isolation barrier RxR+ Received ReverseData (Pos) - “Positive” differential input for data received by the SSIC180 from the LSIC 182 across the isolation barrier RxR− Received ReverseData (Neg) - “Positive” differential input for data received by the SSIC180 from the LSIC 182 across the isolation barrier EnR Enable ReverseTransmission SelR Select Reverse Transmission TxR+ Transmit Reverse Data(Pos) - “Positive” differential input for data to be transmitted fromthe LSIC 182 to the SSIC 180 across the isolation barrier TxF− TransmitReverse Data (Neg) - “Negative” differential input for data to betransmitted from the LSIC 182 to the SSIC 180 across the isolationbarrier RxF+ Received Forward Data (Pos) - “Positive” differential inputfor data received by the LSIC 182 from the SSIC 180 across the isolationbarrier RxF− Received Forward Data (Neg) - “Negative” differential inputfor data received by the LSIC 182 from the SSIC 180 across the isolationbarrier

The RxF+ signal is derived from the negative terminal Vs− of thetransformer secondary and then inverted by inverter IN2L, while the RxF−signal is derived from the positive terminal Vs+ of the transformersecondary and inverted by inverter IN4L. As a result, the signal at RxF+tracks the signal value at terminal Vs+, and the signal at RxF− tracksthe signal value at terminal Vs−.

As noted above, the SelR signal controls the mode of the differentialrectifying buffer. Mode switch MX1S operates as a multiplexer to selecteither the RxF+ signal at pin D0 or the TxR+ signal at pin D1, dependingon the value of the SelR signal input at pin SD of the mode switch MX1S.

If signal SelF is low (e.g., for the “Rectify” mode), then the RxF+signal is selected and passed to the Z output pin of the mode switchMX1S. The signal output from the mode switch MX1S is in turn input tothe tri-state buffer 156, and the complementary transistors M1L and M2Lin the tri-state buffer 156 take on the RxF+ value. For example, whenthe RxF+ signal is “high,” transistor M2L opens (i.e., enters asubstantially nonconductive state) and transistor M1L closes (i.e.,enters a substantially conductive state), effectively connecting thepositive terminal of the transformer secondary to supply capacitor C_(L)and thereby charging the supply capacitor to supply voltage VddL.Simultaneously, the corresponding RxF− signal will be low, since it isthe inverse of the RxF+ signal. The mode switch MX2L passes the low RxF−signal to tri-state buffer 172, causing transistor M3L to open andtransistor M4L to close. The negative terminal Vs− of the transformersecondary thus is effectively connected to the line-side isolatedground. Thus, the current loop formed through (a) the positive terminalVs+ of the transformer secondary, (b) transistor M1L, (c) supplycapacitor C_(L), (d) the isolated ground node, and (e) the negativeterminal Vs− of the transformer secondary is completed, and power isthus transmitted from the SSIC 180 to the LSIC 182.

Once a given value for the RxF+ and RxF− signals is established, apositive feedback loop is created which effectively latches the valuesin, provided that the SelR signal is low and further assuming thetri-state buffer is “enabled” by an appropriate EnR signal. Thislatching effect may be a significant issue if the transistors on theSSIC 180 are not large enough to “overdrive” the transistors on the LSIC182. Accordingly, an embodiment of the present invention provides a“break-before-make” switching scheme, as described above with referenceto FIG. 6, to interrupt the latch and allow new transmission values tobe imposed on the transformer. In particular, the EnR signal may be usedto disable the tri-state buffers for a short time, thereby interruptingthe latch and allowing the transmitting circuitry more easily to forcethe transformer to the next data state (either high or low).Alternatively, the Select lines (SelF and SelR) may also be used todisable or interrupt the latch.

To place the differential rectifying buffer in “transmit” mode, a “high”SelR signal is provided to mode switches MX1L and MX2L. Incoming dataTxR+ and TxR− are therefore passed through the mode switches MX1L andMX2L to the tri-state buffers 156, 172. Accordingly, the complementarytransistors M1L, M2L, M3L and M4L impose the TxR values on the secondaryof the transformer, thereby transmitting reverse data to the SSIC 180.

The differential rectifying buffer configuration described above mayalso be applied in the SSIC 180, as shown in FIG. 5. During the TDM timeinterval when the SSIC 180 is to receive rather than transmit, tri-statebuffers 108 and 114 are caused to latch to, and minor, the forward pulsestream transmitted by the LSIC 182, as a result of the positive feedbackthrough mode switches MX1S and MX2S and tri-state buffers 108 and 114.At the end of each TDM bit period, just before a new value is to betransmitted by the LSIC 182, the SSIC 180 switches are briefly disabled(e.g., placed in a high-impedance state) for a short period of time inthe same “break-before-make” fashion described above. The LSIC 182 thushas an opportunity to impose new data values on the transformer withoutinterference from the SSIC drivers. When the SSIC 180 switches arere-enabled, the SSIC 180 latches to, and amplifies, the new value. Ineffect, a master-slave relationship arises between the transmittingcircuitry and the receiving circuitry, wherein the slave circuit latchesin the value that is transmitted by the master.

Significantly, once the tri-state buffers 108 and 114 in SSIC 180 latchto a given value, an amplified drive current flows from supply sourceVsply through transistors M1S, M2S, M3S and M4S. This amplified currentis added to the current in the transformer primary, thus causing acorrespondingly greater current to flow through the transformersecondary and in effect creating a supplemental pulse stream that istransferred to the rectifier in LSIC 182. More specifically, theadditional current that arises in the transformer secondary representspower and energy that originated in the supply source Vsply on thesystem side and was transferred to the supply capacitor C_(L) on theline side. Thus, in the latched state, power may actually be transferredforward from the STIB 136 to the LSIC 182, even though the LSIC 182 istransmitting. As a result, the stability of the voltage at supplycapacitor C_(L) is dramatically improved, because power is transferredto the LSIC 182 both when the SSIC 180 transmits and when the LSIC 182transmits.

The operation of the LSIC 182 and SSIC 180 may be further understoodwith reference to the timing diagram in FIG. 2 in conjunction with FIG.5. Assuming that the SSIC 180 is about to transmit to the LSIC 182,signal SelF is caused to transition “high” (210) and the SelR signal totransition low (222). Thus, mode switches MX1S and MX2S are set toselect and output the TxF (+/−) signals. A “high” TxF+ signal (212 inbit period 210) will thus be passed as a “high” signal to node VinS+,while the corresponding differential “low” TxF− signal at will be passedto node VinS−. The signals at nodes VinS+ and VinS− are then input tothe logic gates ND1S, ND3S and to the NOR gates NR2S and NR4S.

The EnF signal is also input into logic gates ND1S and ND3S, while itsinverse (after inverters IN1S and IN3S) is input into logic gates NR2Sand NR4S. Because the EnF signal is high (at 214) and the VinS+ signal(which corresponds to the high TxF signal 212) is also high, logic gateND1S produces a “low” signal at its output, causing p-type transistorM1S to “close” and thereby effectively connecting the Vp+ terminal oftransformer T1 to the supply voltage VddS. At the same time, because theinverse of the EnF signal is a “low” signal and the VinS+ signal is“high,” the NOR gate NR2S produces a “low” signal at its output, causingn-type transistor M2S to open and thereby breaking the path between theVp+ terminal of transformer T1 and ground.

Conversely, as a result of the “low” signal at VinS−, in conjunctionwith the “high” EnF signal and its “low” inverse, logic gate ND3Soutputs a “high” signal to p-type transistor M3S and causes it to open,while logic gate NR4S outputs a “low” signal to transistor M4S andcauses it to close. As a result, the terminal Vp− of transformer T1 iseffectively connected to ground. Thus, it may be seen that a “high”signal input at TxF causes a “high” signal at the transformer secondary:terminal Vp+ is effectively connected to supply voltage VddS, andterminal Vp− is effectively connect to ground. It should be understoodthat during this period of time, the voltage at terminal Vp+ ispreferably equal to or greater than the supply voltage VddS, and thevoltage at terminal Vp− is preferably equal to or less than the voltageat ground, so that current tends to flow in the desired direction.

Shortly before the “high” signal is placed on the primary winding Vp ofthe transformer, the receiving latches, tri-state buffers and associatedtransistors in the LSIC 182 may be disabled by a “low” EnR signal (attime 218 in FIG. 2). As a result, transistors M1L, M2L, M3L, M4L are allplaced in a nonconductive state, so that there is no opposing voltage orcurrent that would otherwise tend to resist the imposition of the “high”Vp signal on the primary and secondary windings of the transformer T1.Thus, the “low” EnR signal disables the tri-state buffers and interruptsthe reinforcement of the latched signal.

Because there is no current in the secondary that would tend to resist achange in value at Transformer T1, it is more easily able to transferthe “high” signal at Vp+ to a “high” signal at Vs+, and the “low” signalat Vp− to a “low” signal at Vs−. The “high” and “low” signals at Vs+ andVs− are respectively inverted by inverters IN4L and IN2L to produce“low” and “high” received signals at RxF− and RxF+, respectively.

The LSIC 182 is preferably placed in a “receive” or “latch” mode by a“low” SelR signal at 222 that causes mode switches MX1L and MX2L toselect and output the received signals RxF− and RxF+ instead of thereverse transmission signal TxR. Thus, mode switch MX1L outputs a “low”signal to VinL+, while mode switch MX2L outputs a “high” signal toVinL−.

Meanwhile, the EnR signal is returned to a “high” state (at 220 in FIG.2), thus placing the NAND and NOR gates in operative states. Becauselogic gate ND1L at this point has as its inputs the “high” signal atVinL+ and the “high” EnR signal, it outputs a “low” signal, thus closingp-type transistor M1L. Logic gate NR2L, having as inputs the “high”signal at VinL+ and the “low” input at the output of inverter IN1L(i.e., the inverted EnR signal), produces a “low” output signal, thusopening n-type transistor M1L. Current accordingly flows from Vs+through M1L to VddL, thus charging up capacitor CL. In this manner,power is transferred from the SSIC 180 to the LSIC 182 power supply(formed in part by CL) during the forward transmission from the SSIC 180to the LSIC 182.

Conversely, logic gate ND3L, having as inputs the “low” signal at VinL−and the “high” EnR signal, outputs a “high” signal to p-type transistorM3L, causing it to open. And logic gate NR4L, having as inputs the “low”signal at VinL− and the “low” inverted EnR signal, outputs a “high”signal to n-type M4L, thus causing it to close. The closing oftransistor M4L completes the circuit path for current flowing throughpower supply capacitor CL and load resistance RL to return to the Vs− atthe transformer T1.

Thus, a “latched” condition arises in the LSIC 182, because Vs+ iselectrically connected to VddL while Vs− is electrically connected tothe isolated ground, and because positive feedback via inverters IN2L,IN4L, mode switches Mx1L, Mx2L, and tri-state buffers BUF1S and BUF2Smaintains the latched condition throughout bit period 202.

A supplemental rectifier may also be provided in the LSIC to providestart-up power when a DAA is initially powered up. If the supplycapacitor C_(L) is fully depleted, there will be insufficient voltagefor the control logic to supply the enable and select signals that areneeded for the differential rectifying buffer to operate. Accordingly, asmall “boot-strap” rectifier (e.g., a diode rectifier or a synchronousrectifier) may be provided. When the SSIC starts transmitting, thesupplemental rectifier is forced to follow the SSIC 180 signal, therebytransferring a small quantity of power that charges capacitor CL. Oncethe line-side supply voltage VddL reaches a sufficiently high level forthe LSIC logic to operate, the TDM protocol across the barrier may beestablished, including clock detection, synchronization, andinitialization. The LSIC 182 may then enter the standard power mode inwhich both sides of the barrier are fully engaged in the master/slaveconfiguration.

Advantageously, the parasitic diodes that exist within transistors M1L,M2L, M3L and M4L in the differential rectifying buffer described abovemay be used as the desired supplemental or boot-strap rectifier. Morespecifically, transistors M1L and M3L are preferably P-channel MOSFETs,each having a parasitic p-n diode junction from its drain (connectedrespectively to transformer terminals Vs+ and Vs−) to its source(connected to positive supply voltage VddL). Similarly, transistors M2Land M4L are preferably N-channel MOSFETs, each having a parasitic p-ndiode junction from its source (connected to ground) to its drain(connected respectively to transformer terminals Vs+ and Vs−). Theseparasitic diodes form a diode bridge that may be utilized to generatethe initial start-up voltage that is needed to power up LSIC 182.

Moreover, the parasitic diodes within transistors M1L, M2L, M3L and M4Lmay also be used to provide ESD protection for the SSIC, as described inconnection with diodes 146, 148, 150, and 152 above. In this embodiment,transistors M1L, M2L, M3L and M4L should be designed to withstandanticipated ESD impulse voltages and currents.

Embodiments of the present invention may also be implemented in asingle-ended configuration, rather than a differential configuration.FIG. 7 depicts an exemplary single-ended embodiment. This embodiment issimilar to the double-ended embodiment of FIG. 5, except that thenegative terminals Vp− and Vs− of the transformer primary and secondarywindings are connected to ground, and the primary terminals Vp+ and Vs+are connected directly to RxR+ and RxF+, respectively. The single-endedembodiment depicted in FIG. 7 operates in the same manner as thedouble-ended embodiment of FIG. 5.

The chart in FIG. 8 illustrates the anticipated effectiveness of thepower transfer between the system-side circuitry and the line-sidecircuitry using an embodiment of the present invention. Morespecifically, the y-axis represents the line-side supply voltage VddLgenerated across capacitor C_(L) in the differential rectifying bufferembodiment described above. The x-axis represents the forwardtransmission ratio, which ranges between 0 and 1.0 (or 0% to 100%). Itmay be seen that the line-side supply voltage remains surprisinglystable (between 2.75 V and 2.79 V) regardless of the forwardtransmission ratio.

Embodiments of the present invention thus have several significantadvantages over conventional DAAs. First, the transformer providesexcellent high-voltage isolation between the primary and secondarywindings. Second, common-mode noise rejection is greatly improved by theuse of the STIB 136 and differential signaling across the interface. Thelatching technique described above further reduces common-mode noise,because the tri-state buffers are placed in a non-enabled state only fora very small portion of a standard bit period, so that even ifcommon-mode noise were transferred across the barrier, it would onlygrow while the switches are disconnected (i.e., tri-stated). Third,because a single transformer is used as the isolation barrier for bothdata and power signals, there is a significant savings in componentcosts when compared with prior art systems that use multiple-componentisolation barriers.

Finally, the use of STIB 136 allows a tremendous amount of power to betransferred from the SSIC to the LSIC, so that little, if any, powerfrom a telephone line is needed for the LSIC. For example, in a typicalmodem, the line-side DAA and associated circuitry may require in therange of about 25 to about 50 milliwatts of power. Using embodiments ofthe present invention, this amount of power (about 25 to about 50milliwatts) may readily be transferred from the system-side circuitry tothe line-side circuitry—enough to operate the line-side circuitrywithout tapping power from the telephone line. In general, the amount ofpower that may be transferred using embodiments of the present inventionis limited primarily by the current-carrying capacity of thecomplementary transistors in the tri-state buffer rather than thepower-transfer capacity of the STIB 136. Thus, it is feasible to providelarge complementary transistors in the line-side and system-sidecircuitry, such that more than 50 milliwatts, or even as much as about100 milliwatts of power or more, may be transferred across the STIB 136.

It will be recognized that embodiments of the present invention may alsobe used in conjunction with prior art line-side circuits that tap powerfrom a telephone line while a call is in progress (i.e., in an off-hookcondition). If so, a portion of the line-side power may be obtained fromthe telephone line, while the remaining portion may be supplied by thesystem-side circuit in the manner described above. In this variation,any desired percentage (0% to 100%) of the power needed by the line-sidecircuit may be supplied from the system-side circuitry via embodimentsof the present invention. Preferably, at least a substantial portion(e.g., about 30%) of the power needed by the line-side circuit during acall is supplied by the system-side circuitry across the STIB 136. Stillmore preferably, the amount power supplied by the system-side circuitryacross the STIB 136 is at least a majority, at least a super-majority,or approximately the entirety of the power needed by the line-sidecircuit.

It should also be understood that although the system-side interfacecircuits, line-side interface circuits, rectifying buffer andtransmission protocols of embodiments of the present invention have beendescribed above in connection with the STIB 136, they are not limited touse with a transformer isolation barrier. Rather, they may be used withany transmission medium, including, for example, a four-port interfacesuch as a two-wire twisted pair or a two-capacitor interface.

There has thus been described a digital communication link betweensystem-side and line-side circuitry in a DAA, capable both of carryingboth data signals and power signals. It will be understood, however,that the foregoing description of the invention is by way of exampleonly, and variations will be evident to those skilled in the art withoutdeparting from the scope of the invention, which is as set out in theappended claims.

What is claimed is:
 1. A signal-powered integrated circuit, comprising:an integrated circuit die including a ground node, a supply nodeconfigured to provide a supply voltage to a plurality of circuits on theintegrated circuit die, and a first terminal for receiving an inputsignal having data content and a predetermined energy; a receive bufferformed on the integrated circuit die, connected to the first terminaland capable of receiving the data content associated with the inputsignal, the receive buffer having an output terminal configured tooutput the buffered input signal; a rectifier formed on the integratedcircuit die, the rectifier including a first diode connected between thefirst terminal and the ground node, and a second diode connected betweenthe first terminal and the supply node; a transmit buffer having aninput terminal and an output terminal that is connected to the firstterminal of the integrated circuit die; and a feedback path connectedbetween the output terminal of the receive buffer and the input terminalof the transmit buffer, and configured such that the buffered inputsignal passes through the feedback path to the input terminal of thetransmit buffer; wherein: the rectifier is capable of rectifying theinput signal and passing at least a portion of the input signal'spredetermined energy to the supply node, and each of the first andsecond diodes is capable of withstanding an ESD impulse.
 2. The circuitof claim 1, wherein each diode in the rectifier is capable ofwithstanding an ESD impulse of at least about 1000 volts.
 3. The circuitof claim 1, wherein each diode in the rectifier is capable ofwithstanding an ESD impulse in the range from about 1000 volts to about2000 volts.
 4. The circuit of claim 1, wherein the first and seconddiodes are parasitic diodes in a first transistor and a secondtransistor, respectively.
 5. The signal-powered integrated circuit ofclaim 4, wherein the first and second transistors are complementarytransistors in the transmit buffer.
 6. The circuit of claim 1, whereinthe average energy of the input signal is sufficiently large to causethe first and second diodes to operate as a rectifier.
 7. The circuit ofclaim 1, wherein the first and second diodes are the primary devices orthe only devices that protect the integrated circuit die fromelectrostatic discharge through the first terminal.
 8. The circuit ofclaim 1, wherein: the input signal is a differential input signal formedby a first signal and a second signal complementary to the first, andthe first terminal is capable of receiving the first signal; theintegrated circuit die further includes a second terminal capable ofreceiving the second signal; the rectifier further includes a thirddiode connected between the second terminal and the ground node, and afourth diode connected between the second terminal and the supply node;the first, second, third and fourth diodes together provide full-waverectification for the differential input signal; and each of the thirdand fourth diodes is capable of withstanding an ESD impulse.
 9. Thesignal-powered integrated circuit of claim 1, wherein the supply node isconnected to the receive buffer to provide the supply voltage to thereceive buffer.
 10. The signal-powered integrated circuit of claim 1,wherein the receive buffer is an amplifying-type buffer that amplifiesthe input signal.
 11. The signal-powered integrated circuit of claim 1,wherein the feedback path comprises: a mode-selection switch that is (i)configured to receive (a) the buffered input signal and (b) a reversetransmit signal for transmission via the first terminal, and (ii)configured to select either the buffered input signal or the reversetransmit signal and to pass the selected signal to the transmit buffer'sinput terminal.
 12. The signal-powered integrated circuit of claim 11,wherein the mode-selection switch is a multiplexer.
 13. A method ofpowering an integrated circuit, comprising the steps of: receiving afirst input signal having data content and a predetermined energy at afirst terminal of the integrated circuit; passing a first portion of thefirst input signal through a first receive buffer to produce a firstbuffered input signal; passing the first buffered input signal through afirst feedback path to an input terminal of a first transmit bufferhaving a first output terminal connected to the first terminal of theintegrated circuit; rectifying a second portion of the first inputsignal via a first diode connected between the first terminal and aground node of the integrated circuit, and a second diode connectedbetween the first terminal and a supply node configured to provide asupply voltage to a plurality of circuits on the integrated circuit; andstoring at least a portion of the first input signal's predeterminedenergy at the supply node; wherein each of the first and second diodesis capable of withstanding an ESD impulse.
 14. The method of claim 13,wherein each diode in the rectifier is capable of withstanding an ESDimpulse of at least about 1000 volts.
 15. The method of claim 13,wherein each diode in the rectifier is capable of withstanding an ESDimpulse in the range from about 1000 volts to about 2000 volts.
 16. Themethod of claim 13, wherein the first and second diodes are parasiticdiodes in a first transistor and a second transistor, respectively. 17.The method of claim 13, wherein the first input signal has an averageenergy that is sufficiently large to enable the rectifier to rectify theinput signal.
 18. The method of claim 13, further comprising the step ofprotecting the integrated circuit from electrostatic discharge throughthe first terminal only by the first and second diodes.
 19. The methodof claim 13, further comprising the steps of: receiving a second inputsignal having data content and a predetermined energy at a secondterminal of the integrated circuit, the second input signal forming adifferential input signal with the first input signal; passing a firstportion of the second input signal through a second receive buffer toproduce a second buffered input signal; passing the second bufferedinput signal through a second feedback path to an input terminal of asecond transmit buffer having an output terminal connected to the secondterminal of the integrated circuit; rectifying a second portion of thesecond input signal via a third diode connected between the secondterminal and the ground node of the integrated circuit, and a fourthdiode connected between the second terminal and the supply node of theintegrated circuit, each diode being capable of withstanding an ESDimpulse; and storing at least a portion of the second input signal'spredetermined energy at the supply node; and thereby full-waverectifying the differential input signal.
 20. The method of claim 13,further comprising providing the supply voltage to the first receivebuffer from the supply node.
 21. The method of claim 16, wherein thefirst and second transistors are complementary transistors in the firsttransmit buffer.
 22. The method of claim 13, wherein passing the firstbuffered input signal through the first feedback path to the inputterminal of the first transmit buffer comprises: a mode-selection switchreceiving (a) the first buffered input signal and (b) a reverse transmitsignal for transmission via the first terminal, selecting either thefirst buffered input signal or the reverse transmit signal, and passingthe selected signal to the first transmit buffer's input terminal. 23.The method of claim 22, wherein the mode-selection switch is amultiplexer.